How To Use memory device In A Sentence
- Journal of the American Chemical Society that they have constructed a type of superlattice that shows "unique low-to-high and high-to-low resistance switching that may be applicable to the fabrication of an emerging memory device known as resistive random access memory," or RRAM. Newswise: Latest News
- Dr. Jay A. Switzer and his colleagues at Missouri S and T have said that they have constructed a type of superlattice that shows "unique low-to-high and high-to-low resistance switching that may be applicable to the fabrication of an emerging memory device known as resistive random access memory," or RRA.. Gaea Times (by Simple Thoughts) Breaking News and incisive views 24/7
- The demands for continuing microminiaturization led to the fabrication of flash memory devices comprising transistors having a gate width of about 0.13 micron and under and gate structures spaced apart by a small gap of about 0.30 micron or less.
- Recently, when precision processing equipment such as dicing saws have been used overseas, the problem of contamination by viruses through USB memory devices has become increasingly serious and the risk of secondary contamination when using host communication and other functions is also on the rise. ACN Newswire
- ADP is commonly used in computer memory devices , fiber optic technology, lasers and other electro - optic applications.
- This is how a computer works, by passing data between switches and memory devices made from semiconducting and magnetic materials.
- Command data for controlling the flash memory device is input to the controller 218.
- The flash memory device includes a semiconductor substrate and heavily doped impurity regions formed spaced apart from one another by a predetermined distance in the semiconductor substrate in a first direction.
- The memory device also includes a counter circuitry coupled to the decode logic circuitry that generates a counter value based on the decoded address.
- By Ron Wilson, Executive Editor -- EDN, 2 / 5 / 2009 have announced a significant advance in the retention time of multiatom quantum-memory devices-from a previous maximum of 32 μsec to 7 msec. Undefined
